Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Jih Jen Wu; Kuei Hsien Chen; Cheng Yen Wen; Li Chyong Chen; Juen Kai Wang; Yueh Chung Yu; Chang Wan Wang; Erh Kang Lin

doi:10.1039/a908523h

Effect of H₂ addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Jih Jen Wu, Kuei Hsien Chen, Cheng Yen Wen, Li Chyong Chen, Juen Kai Wang, Yueh Chung Yu, Chang Wan Wang, Erh Kang Lin

化學工程學系

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The effect of H₂ addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH₄/SiH₄/N₂ even at CH₄: SiH₄ ratios as high as 150:1. With H₂ addition and at a CH₄. SiH₄ ratio of 100:1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.

原文	English
頁（從 - 到）	783-787
頁數	5
期刊	Journal of Materials Chemistry
卷	10
發行號	3
DOIs	https://doi.org/10.1039/a908523h
出版狀態	Published - 2000

All Science Journal Classification (ASJC) codes

化學 (全部)
材料化學

存取文件

10.1039/a908523h

其它文件與鏈接

引用此

@article{583097baeb5c492883769241194fbe02,

title = "Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor",

abstract = "The effect of H2 addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH4/SiH4/N2 even at CH4: SiH4 ratios as high as 150:1. With H2 addition and at a CH4. SiH4 ratio of 100:1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.",

author = "Wu, {Jih Jen} and Chen, {Kuei Hsien} and Wen, {Cheng Yen} and Chen, {Li Chyong} and Wang, {Juen Kai} and Yu, {Yueh Chung} and Wang, {Chang Wan} and Lin, {Erh Kang}",

year = "2000",

doi = "10.1039/a908523h",

language = "English",

volume = "10",

pages = "783--787",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "3",

}

TY - JOUR

T1 - Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

AU - Wu, Jih Jen

AU - Chen, Kuei Hsien

AU - Wen, Cheng Yen

AU - Chen, Li Chyong

AU - Wang, Juen Kai

AU - Yu, Yueh Chung

AU - Wang, Chang Wan

AU - Lin, Erh Kang

PY - 2000

Y1 - 2000

N2 - The effect of H2 addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH4/SiH4/N2 even at CH4: SiH4 ratios as high as 150:1. With H2 addition and at a CH4. SiH4 ratio of 100:1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.

AB - The effect of H2 addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH4/SiH4/N2 even at CH4: SiH4 ratios as high as 150:1. With H2 addition and at a CH4. SiH4 ratio of 100:1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.

UR - http://www.scopus.com/inward/record.url?scp=0034120285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034120285&partnerID=8YFLogxK

U2 - 10.1039/a908523h

DO - 10.1039/a908523h

M3 - Article

AN - SCOPUS:0034120285

SN - 0959-9428

VL - 10

SP - 783

EP - 787

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 3

ER -

Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此

Effect of H₂ addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor