Effect of halogen in high-density oxygen plasmas on photoresist trimming

Chian Yuh Sin, Bing Hung Chen, W. L. Loh, J. Yu, P. Yelehanka, A. See, L. Chan

研究成果: Article

2 引文 (Scopus)

摘要

Effects of halogens, CF4, Cl2, or HBr, on the photoresist trimming in high-density oxygen plasmas for sub-0.1-μm device fabrication were studied in an inductively coupled plasma (ICP) etcher. The trim rates were measured as a function of halogen gas percentages. The activation energy and the resulting resist profiles were investigated as well, showing that the CF4/O2 gives the highest trim rate, followed by HBr/O2 and then Cl2/O2 at the same amount of additive gas in the mixture. Effects of different plasma chemistry on the chemical constituents of the resist sidewall films were also examined with the angle-resolved X-ray photo-electron spectroscopy (XPS). XPS analysis reveals that all halogen gases are useful for resist sidewall protection because of the passivation by the halogen-containing polymer. The effects of halogen addition include the reaction enhancement, reaction-site competition between oxygen and halogen, changes in the plasma gas chemistry, and the resist passivation.

原文English
頁(從 - 到)1578-1588
頁數11
期刊AIChE Journal
50
發行號7
DOIs
出版狀態Published - 2004 七月 1

指紋

Halogens
Trimming
Photoresists
Oxygen
Plasmas
Gases
Passivation
X ray photoelectron spectroscopy
Spectrum Analysis
Inductively coupled plasma
X-Rays
Electrons
Plasma Gases
Activation energy
Fabrication
Polymers
Equipment and Supplies

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Environmental Engineering
  • Chemical Engineering(all)

引用此文

Sin, C. Y., Chen, B. H., Loh, W. L., Yu, J., Yelehanka, P., See, A., & Chan, L. (2004). Effect of halogen in high-density oxygen plasmas on photoresist trimming. AIChE Journal, 50(7), 1578-1588. https://doi.org/10.1002/aic.10145
Sin, Chian Yuh ; Chen, Bing Hung ; Loh, W. L. ; Yu, J. ; Yelehanka, P. ; See, A. ; Chan, L. / Effect of halogen in high-density oxygen plasmas on photoresist trimming. 於: AIChE Journal. 2004 ; 卷 50, 編號 7. 頁 1578-1588.
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Sin, CY, Chen, BH, Loh, WL, Yu, J, Yelehanka, P, See, A & Chan, L 2004, 'Effect of halogen in high-density oxygen plasmas on photoresist trimming', AIChE Journal, 卷 50, 編號 7, 頁 1578-1588. https://doi.org/10.1002/aic.10145

Effect of halogen in high-density oxygen plasmas on photoresist trimming. / Sin, Chian Yuh; Chen, Bing Hung; Loh, W. L.; Yu, J.; Yelehanka, P.; See, A.; Chan, L.

於: AIChE Journal, 卷 50, 編號 7, 01.07.2004, p. 1578-1588.

研究成果: Article

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AU - See, A.

AU - Chan, L.

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