Effect of halogen in high-density oxygen plasmas on photoresist trimming

Chian Yuh Sin, Bing Hung Chen, W. L. Loh, J. Yu, P. Yelehanka, A. See, L. Chan

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Effects of halogens, CF4, Cl2, or HBr, on the photoresist trimming in high-density oxygen plasmas for sub-0.1-μm device fabrication were studied in an inductively coupled plasma (ICP) etcher. The trim rates were measured as a function of halogen gas percentages. The activation energy and the resulting resist profiles were investigated as well, showing that the CF4/O2 gives the highest trim rate, followed by HBr/O2 and then Cl2/O2 at the same amount of additive gas in the mixture. Effects of different plasma chemistry on the chemical constituents of the resist sidewall films were also examined with the angle-resolved X-ray photo-electron spectroscopy (XPS). XPS analysis reveals that all halogen gases are useful for resist sidewall protection because of the passivation by the halogen-containing polymer. The effects of halogen addition include the reaction enhancement, reaction-site competition between oxygen and halogen, changes in the plasma gas chemistry, and the resist passivation.

原文English
頁(從 - 到)1578-1588
頁數11
期刊AIChE Journal
50
發行號7
DOIs
出版狀態Published - 2004 七月 1

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Environmental Engineering
  • Chemical Engineering(all)

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