Effect of hot-carrier-induced interface states distribution on linear drain current degradation in 0.35 μm n-type lateral diffused metal-oxide- semiconductor transistors

J. R. Lee, Jone F. Chen, Kuo Ming Wu, C. M. Liu, S. L. Hsu

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The mechanisms of hot-carrier-induced linear drain current (Idlin) degradation in a 0.35 μm n -type lateral diffused metal-oxide-semiconductor transistor, operating at a nominal voltage of 12 V, is investigated. Results and analysis show that the location of hot-carrier-induced interface states varies with stress gate voltage. Stress-induced interface states located in accumulation region under polygate have little effect on Idlin degradation. As a result, interface states located in drain-side spacer region dominate Idlin degradation when interface states located in channel region are negligible.

原文English
文章編號103510
期刊Applied Physics Letters
92
發行號10
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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