Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires

Sin Yee Lim, Sanjaya Brahma, Chuan Pu Liu, Ruey Chi Wang, Jow Lay Huang

研究成果: Article

18 引文 斯高帕斯(Scopus)

摘要

In this work, indium (In) doped ZnO nanowires are grown on a Si substrate by chemical vapor deposition (CVD), at a relatively low temperature of 550 C. The effects of In concentration on the morphology, microstructure, luminescence and electrical properties of ZnO nanowires are investigated. The diameters and lengths of these nanowires are in the ranges of 70-311 nm and 10-15 μm, respectively. These nanowires are single crystals growing in the [0001] direction. The maximum solubility of In in ZnO is estimated to be 3.47 at.%. Photoluminescence (PL) spectra reveal a red shift in the ultraviolet emission and intensity enhancement in the green emission with increasing indium doping concentration. Besides, carrier concentration, mobility and resistivity of the nanowires with different doping concentrations are determined based on single-nanowire field effect transistors (FET).

原文English
頁(從 - 到)165-171
頁數7
期刊Thin Solid Films
549
DOIs
出版狀態Published - 2013 十二月 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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