Effect of lattice transformation on the pressure dependence of Tc of V3Si single crystals

S. Huang, C. W. Chu

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The superconducting transition temperature Tc has been measured under hydrostatic pressure up to 18 kbar on both transforming and nontransforming V3Si single crystals. dTcdp was found to be always positive, but about 30% smaller for the nontransforming samples. The results are compared with predictions based on previous elastic-modulus measurements under pressure.

原文English
頁(從 - 到)4030-4032
頁數3
期刊Physical Review B
10
發行號9
DOIs
出版狀態Published - 1974

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學

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