Effect of nanocomposite gate dielectric roughness on pentacene field-effect transistor

Wen His Lee, C. C. Wang

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

The effects of the surface roughness of the nanocomposite gate dielectric on the correlation between grain size and mobility of pentacene organic thin-film transistors were investigated. In this work, the nanocomposite as gate dielectric film was carried out by blending polyimide and nano- Ti O 2 particles to enhance the capacitance of the gate dielectric. The roughness of the nanocomposite gate dielectric is varied from 0.8 to 20 nm with increasing Ti O2 concentration from 0 to 5 vol % in polyimide. Grain size of pentacene decreases with increasing roughness of the nanocomposite gate dielectric film. Two distinguishable regions are observed on the correlation between grain size and mobility of pentacene. In region (I), the nanocomposite gate dielectric with 0-2 vol % Ti O2 content shows that mobility does not significant change with decreasing grain size of pentacene, similar to the behavior of the organic polymer gate dielectric. In region (II), the nanocomposite gate dielectric with 3-5 vol % Ti O2 content shows that mobility is remarkably decreased with decreasing grain size of pentacene, similar to the behavior of the inorganic gate dielectric.

原文English
頁(從 - 到)1116-1121
頁數6
期刊Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
27
發行號3
DOIs
出版狀態Published - 2009

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 儀器
  • 製程化學與技術
  • 表面、塗料和薄膜
  • 電氣與電子工程
  • 材料化學

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