TY - GEN
T1 - Effect of NDD dosage on hot-carrier reliability in DMOS transistors
AU - Chen, Jone-Fang
AU - Tian, Kuen Shiuan
AU - Chen, Shiang Yu
AU - Wu, Kuo Ming
AU - Liu, C. M.
PY - 2009/7/8
Y1 - 2009/7/8
N2 - The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.
AB - The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.
UR - http://www.scopus.com/inward/record.url?scp=67649647421&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67649647421&partnerID=8YFLogxK
U2 - 10.1109/ISQED.2009.4810298
DO - 10.1109/ISQED.2009.4810298
M3 - Conference contribution
AN - SCOPUS:67649647421
SN - 9781424429530
T3 - Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009
SP - 226
EP - 229
BT - Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009
T2 - 10th International Symposium on Quality Electronic Design, ISQED 2009
Y2 - 16 March 2009 through 18 March 2009
ER -