Effect of nickel annealing on GaN-based photodetectors

T. P. Chen, S. J. Young, Shoou-Jinn Chang, S. M. Wang, C. H. Hsiao, B. R. Huang, C. B. Yang

研究成果: Article

摘要

In this study, GaN metal-semiconductor-metal (MSM) photodetectors (PDs) prepared with and without Ni treatment were fabricated. From I-V measurement, it was found that the fabricated device annealed in O 2 ambient at 600C, 90 sec exhibited lower dark current by five orders of magnitude than conventional one. Further, it was also found that the UV-to-visible rejection ratio of GaN PDs with Ni treatment is 12146 while that of GaN MSM PDs without Ni treatment is 102. The smaller dark current and higher responsivity observed from the PD prepared with Ni treatment indicated that we could improve the performance of GaN-based MSM PDs by using Ni treatment methodology.

原文English
期刊Electrochemical and Solid-State Letters
15
發行號4
DOIs
出版狀態Published - 2012 二月 27

指紋

Photodetectors
Nickel
photometers
Metals
nickel
Annealing
annealing
metals
Dark currents
Semiconductor materials
dark current
rejection
methodology

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

引用此文

Chen, T. P., Young, S. J., Chang, S-J., Wang, S. M., Hsiao, C. H., Huang, B. R., & Yang, C. B. (2012). Effect of nickel annealing on GaN-based photodetectors. Electrochemical and Solid-State Letters, 15(4). https://doi.org/10.1149/2.027204esl
Chen, T. P. ; Young, S. J. ; Chang, Shoou-Jinn ; Wang, S. M. ; Hsiao, C. H. ; Huang, B. R. ; Yang, C. B. / Effect of nickel annealing on GaN-based photodetectors. 於: Electrochemical and Solid-State Letters. 2012 ; 卷 15, 編號 4.
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Effect of nickel annealing on GaN-based photodetectors. / Chen, T. P.; Young, S. J.; Chang, Shoou-Jinn; Wang, S. M.; Hsiao, C. H.; Huang, B. R.; Yang, C. B.

於: Electrochemical and Solid-State Letters, 卷 15, 編號 4, 27.02.2012.

研究成果: Article

TY - JOUR

T1 - Effect of nickel annealing on GaN-based photodetectors

AU - Chen, T. P.

AU - Young, S. J.

AU - Chang, Shoou-Jinn

AU - Wang, S. M.

AU - Hsiao, C. H.

AU - Huang, B. R.

AU - Yang, C. B.

PY - 2012/2/27

Y1 - 2012/2/27

N2 - In this study, GaN metal-semiconductor-metal (MSM) photodetectors (PDs) prepared with and without Ni treatment were fabricated. From I-V measurement, it was found that the fabricated device annealed in O 2 ambient at 600C, 90 sec exhibited lower dark current by five orders of magnitude than conventional one. Further, it was also found that the UV-to-visible rejection ratio of GaN PDs with Ni treatment is 12146 while that of GaN MSM PDs without Ni treatment is 102. The smaller dark current and higher responsivity observed from the PD prepared with Ni treatment indicated that we could improve the performance of GaN-based MSM PDs by using Ni treatment methodology.

AB - In this study, GaN metal-semiconductor-metal (MSM) photodetectors (PDs) prepared with and without Ni treatment were fabricated. From I-V measurement, it was found that the fabricated device annealed in O 2 ambient at 600C, 90 sec exhibited lower dark current by five orders of magnitude than conventional one. Further, it was also found that the UV-to-visible rejection ratio of GaN PDs with Ni treatment is 12146 while that of GaN MSM PDs without Ni treatment is 102. The smaller dark current and higher responsivity observed from the PD prepared with Ni treatment indicated that we could improve the performance of GaN-based MSM PDs by using Ni treatment methodology.

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