Effect of oxalic acid concentration on the formation of anodic aluminum oxide using pulse anodization at room temperature

Chen Kuei Chung, T. Y. Liu, W. T. Chang

研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)

摘要

Most anodic aluminum oxide (AAO) or porous anodic aluminum (PAA) films were fabricated using the potentiostatic method from high-purity (99.999%) aluminum films at low temperatures of 0-10°C to avoid dissolution effects at room temperature (RT). In this article, the fabrication of AAO or PAA film from commercial purity (99%) aluminum at RT has been investigated using hybrid pulse anodization under different oxalic acid concentration and process duration. The effect of acid concentration and anodization duration on the formation of AAO size and morphology has been studied. Both pore diameter and oxide layer thickness of AAO films were examined via SEM images and found that both increased with increasing oxalic concentration and anodization duration. In addition, the pore distribution was more concentrated at high electrolytic concentration and anodization duration.

原文English
頁(從 - 到)1451-1456
頁數6
期刊Microsystem Technologies
16
發行號8-9
DOIs
出版狀態Published - 2010 八月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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