Effect of oxygen partial pressure on electrical characteristics of amorphous zinc-tin-oxide thin-film transistors

Sheng Po Chang

研究成果: Conference contribution

摘要

We fabricated and studied the electrical characteristics of thin-film transistors with an amorphous zinc-tin-oxide (a-ZTO) channel, which was deposited by radio frequency magnetron co-sputtering under different oxygen partial pressures. The effect of varying the oxygen concentration on the electrical properties and device performance of the a-ZTO TFTs was investigated. A positive shift observed in the threshold voltage with increasing oxygen suggests that the number of oxygen vacancies in the a-ZTO film decreased. With an oxygen flow rate of 4%, a threshold voltage of 2.25 V, an on-off current ratio of 2.1 × 103, and a subthreshold slope of 0.8 V·dec-1 were obtained.

原文English
主出版物標題Innovative Solutions in the Field of Engineering Sciences
發行者Trans Tech Publications Ltd
頁面229-233
頁數5
ISBN(列印)9783038351511
DOIs
出版狀態Published - 2014
事件2014 International Conference on Applied Mechanics and Mechanical Automation, AMMA 2014 - Macao, China
持續時間: 2014 5月 202014 5月 21

出版系列

名字Applied Mechanics and Materials
590
ISSN(列印)1660-9336
ISSN(電子)1662-7482

Conference

Conference2014 International Conference on Applied Mechanics and Mechanical Automation, AMMA 2014
國家/地區China
城市Macao
期間14-05-2014-05-21

All Science Journal Classification (ASJC) codes

  • 一般工程

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