Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Kuan Yin Chen; Sheng Po Chang; Chih hung Lin

doi:10.1039/C8RA08803A

Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Kuan Yin Chen, Sheng Po Chang, Chih hung Lin

微奈米科技研究中心

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10 ⁴ , with a photoresponsivity of 1.9 × 10 ⁻² A W ⁻¹ , as well as a rejection ratio of 2.68 × 10 ⁴ at a voltage bias of 10 V.

原文	English
頁（從 - 到）	87-90
頁數	4
期刊	RSC Advances
卷	9
發行號	1
DOIs	https://doi.org/10.1039/C8RA08803A
出版狀態	Published - 2019

All Science Journal Classification (ASJC) codes

一般化學
一般化學工程

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10.1039/C8RA08803A

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title = "Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector",

abstract = " An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10 4 , with a photoresponsivity of 1.9 × 10 −2 A W −1 , as well as a rejection ratio of 2.68 × 10 4 at a voltage bias of 10 V.",

author = "Chen, {Kuan Yin} and Chang, {Sheng Po} and Lin, {Chih hung}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2019",

doi = "10.1039/C8RA08803A",

language = "English",

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T1 - Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

AU - Chen, Kuan Yin

AU - Chang, Sheng Po

AU - Lin, Chih hung

N1 - Publisher Copyright: © The Royal Society of Chemistry.

PY - 2019

Y1 - 2019

N2 - An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10 4 , with a photoresponsivity of 1.9 × 10 −2 A W −1 , as well as a rejection ratio of 2.68 × 10 4 at a voltage bias of 10 V.

AB - An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10 4 , with a photoresponsivity of 1.9 × 10 −2 A W −1 , as well as a rejection ratio of 2.68 × 10 4 at a voltage bias of 10 V.

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DO - 10.1039/C8RA08803A

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JO - RSC Advances

JF - RSC Advances

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Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

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