Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO 2 dielectric

C. W. Yang, Y. K. Fang, C. H. Chen, S. F. Chen, Yu-Cheng Lin, C. S. Lin, M. F. Wang, Y. M. Lin, T. H. Hou, C. H. Chen, L. G. Yao, S. C. Chen, M. S. Liang

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO 2 . It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.

原文English
頁(從 - 到)308-310
頁數3
期刊Applied Physics Letters
83
發行號2
DOIs
出版狀態Published - 2003 7月 14
對外發佈

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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