Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers

C. T. Lee, H. W. Kao, F. T. Hwang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We report the effect of the Pt barrier on the thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers. Ti/Al/Au (25/100/200 nm) and Ti/Al/Pt/Au (25/100/50/200 nm) multilayers were, respectively, deposited on as-implanted and recovered Si-implanted n-type GaN samples. The associated dependence of the specific contact resistance on the annealing time at various temperatures was compared. The long-term ohmic stability of a Ti/Al/Pt/Au multilayer in contact with a Si-implanted n-type GaN layer was much better than that of the Ti/Al/Au multilayer. This superior stability is attributed to the barrier function of the Pt interlayer. The Pt/Au bilayer can also passivate the propensity of oxidation for the conventional Ti/Al bilayer in contact with n-type GaN layers at elevated temperatures.

原文English
頁(從 - 到)861-865
頁數5
期刊Journal of Electronic Materials
30
發行號7
DOIs
出版狀態Published - 2001 7月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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