Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells

Z. M. Zeng; P. Khalili Amiri; G. Rowlands; H. Zhao; I. N. Krivorotov; J. P. Wang; J. A. Katine; J. Langer; K. Galatsis; K. L. Wang; H. W. Jiang

doi:10.1063/1.3556615

Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells

Z. M. Zeng, P. Khalili Amiri, G. Rowlands, H. Zhao, I. N. Krivorotov, J. P. Wang, J. A. Katine, J. Langer, K. Galatsis, K. L. Wang, H. W. Jiang

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摘要

We use ultrafast current-induced switching measurements to study spin-transfer switching performance metrics, such as write energy per bit (E_W) and switching current density (J_c), as a function of resistance-area product (RA) (hence MgO thickness) in magnetic tunnel junction cells used for magnetoresistive random access memory (MRAM). E_W increases with RA, while J_c decreases with increasing RA for both switching directions. The results are discussed in terms of RA optimization for low write energy and current drive capability (hence density) of the MRAM cells. Switching times <2 ns and write energies <0.3 pJ are demonstrated for 135 nm×65 nm CoFeB/MgO/CoFeB devices.

原文	English
文章編號	072512
期刊	Applied Physics Letters
卷	98
發行號	7
DOIs	https://doi.org/10.1063/1.3556615
出版狀態	Published - 2011 2月 14

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.3556615

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title = "Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells",

abstract = "We use ultrafast current-induced switching measurements to study spin-transfer switching performance metrics, such as write energy per bit (EW) and switching current density (Jc), as a function of resistance-area product (RA) (hence MgO thickness) in magnetic tunnel junction cells used for magnetoresistive random access memory (MRAM). EW increases with RA, while Jc decreases with increasing RA for both switching directions. The results are discussed in terms of RA optimization for low write energy and current drive capability (hence density) of the MRAM cells. Switching times <2 ns and write energies <0.3 pJ are demonstrated for 135 nm×65 nm CoFeB/MgO/CoFeB devices.",

author = "Zeng, {Z. M.} and {Khalili Amiri}, P. and G. Rowlands and H. Zhao and Krivorotov, {I. N.} and Wang, {J. P.} and Katine, {J. A.} and J. Langer and K. Galatsis and Wang, {K. L.} and Jiang, {H. W.}",

note = "Funding Information: We would like to acknowledge fruitful discussions with Y. Huai. This work was supported by the DARPA STT-RAM program (HR0011-09-C-0114) and the Nanoelectronics Research Initiative (NRI) through the Western Institute of Nanoelectronics (WIN).",

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AU - Zeng, Z. M.

AU - Khalili Amiri, P.

AU - Rowlands, G.

AU - Zhao, H.

AU - Krivorotov, I. N.

AU - Wang, J. P.

AU - Katine, J. A.

AU - Langer, J.

AU - Galatsis, K.

AU - Wang, K. L.

AU - Jiang, H. W.

N1 - Funding Information: We would like to acknowledge fruitful discussions with Y. Huai. This work was supported by the DARPA STT-RAM program (HR0011-09-C-0114) and the Nanoelectronics Research Initiative (NRI) through the Western Institute of Nanoelectronics (WIN).

PY - 2011/2/14

Y1 - 2011/2/14

N2 - We use ultrafast current-induced switching measurements to study spin-transfer switching performance metrics, such as write energy per bit (EW) and switching current density (Jc), as a function of resistance-area product (RA) (hence MgO thickness) in magnetic tunnel junction cells used for magnetoresistive random access memory (MRAM). EW increases with RA, while Jc decreases with increasing RA for both switching directions. The results are discussed in terms of RA optimization for low write energy and current drive capability (hence density) of the MRAM cells. Switching times <2 ns and write energies <0.3 pJ are demonstrated for 135 nm×65 nm CoFeB/MgO/CoFeB devices.

AB - We use ultrafast current-induced switching measurements to study spin-transfer switching performance metrics, such as write energy per bit (EW) and switching current density (Jc), as a function of resistance-area product (RA) (hence MgO thickness) in magnetic tunnel junction cells used for magnetoresistive random access memory (MRAM). EW increases with RA, while Jc decreases with increasing RA for both switching directions. The results are discussed in terms of RA optimization for low write energy and current drive capability (hence density) of the MRAM cells. Switching times <2 ns and write energies <0.3 pJ are demonstrated for 135 nm×65 nm CoFeB/MgO/CoFeB devices.

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Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells

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