Effect of rinsing temperature on electrical characteristics of ZnO TFTs built using successive ionic layer adsorption and reaction

In this study, the effects of ethylene glycol treatment temperature on the transfer characteristics of ZnO thin film transistors (TFTs), constructed using successive ionic layer adsorption and reaction (SILAR), were investigated. Under hightemperature solution treatments, the TFT device demonstrated the typical positive shift in threshold voltage (ΔV_th). The shifting phenomenon results from lower oxygen vacancies attributable to Zn(OH)2 in the films following a rise in the treatment temperature. However, at temperatures higher than 145°C, particle mobility tends be significantly reduced due to the shedding of ZnO from the surface. As a result, the influence of treatment temperature on SILAR is an essential topic of study.