Effect of silicon doped quantum barriers on nitride-based light emitting diodes

T. H. Chiang; Y. Z. Chiou; S. J. Chang; T. K. Lin; S. P. Chang

doi:10.1149/1.3603970

Effect of silicon doped quantum barriers on nitride-based light emitting diodes

T. H. Chiang, Y. Z. Chiou, S. J. Chang, T. K. Lin, S. P. Chang

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

This study reports the fabrication of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different Si-doped concentration in GaN barrier layers. The light output power and electrostatic discharge (ESD) characteristics of the LEDs improved as Si-doped concentration in GaN barrier layers increased. This result is attributed to the improvement in hole confinement by doping silicon in the GaN barriers. The light intensity of the LED with a 2 × 10¹⁸/cm³ silicon doping barrier layer was less sensitive to elevated temperature.

原文	English
頁（從 - 到）	H836-H839
期刊	Journal of the Electrochemical Society
卷	158
發行號	8
DOIs	https://doi.org/10.1149/1.3603970
出版狀態	Published - 2011 8月

All Science Journal Classification (ASJC) codes

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜
電化學
材料化學

UN SDG

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title = "Effect of silicon doped quantum barriers on nitride-based light emitting diodes",

abstract = "This study reports the fabrication of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different Si-doped concentration in GaN barrier layers. The light output power and electrostatic discharge (ESD) characteristics of the LEDs improved as Si-doped concentration in GaN barrier layers increased. This result is attributed to the improvement in hole confinement by doping silicon in the GaN barriers. The light intensity of the LED with a 2 × 1018/cm3 silicon doping barrier layer was less sensitive to elevated temperature.",

author = "Chiang, {T. H.} and Chiou, {Y. Z.} and Chang, {S. J.} and Lin, {T. K.} and Chang, {S. P.}",

year = "2011",

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doi = "10.1149/1.3603970",

language = "English",

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AU - Chiang, T. H.

AU - Chiou, Y. Z.

AU - Chang, S. J.

AU - Lin, T. K.

AU - Chang, S. P.

PY - 2011/8

Y1 - 2011/8

N2 - This study reports the fabrication of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different Si-doped concentration in GaN barrier layers. The light output power and electrostatic discharge (ESD) characteristics of the LEDs improved as Si-doped concentration in GaN barrier layers increased. This result is attributed to the improvement in hole confinement by doping silicon in the GaN barriers. The light intensity of the LED with a 2 × 1018/cm3 silicon doping barrier layer was less sensitive to elevated temperature.

AB - This study reports the fabrication of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different Si-doped concentration in GaN barrier layers. The light output power and electrostatic discharge (ESD) characteristics of the LEDs improved as Si-doped concentration in GaN barrier layers increased. This result is attributed to the improvement in hole confinement by doping silicon in the GaN barriers. The light intensity of the LED with a 2 × 1018/cm3 silicon doping barrier layer was less sensitive to elevated temperature.

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SP - H836-H839

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Effect of silicon doped quantum barriers on nitride-based light emitting diodes

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