摘要
This study investigates the effects of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density (Dit), resulting in the lowering of open circuit voltage (Voc) and fill factor (FF). The cell fabricated at a sputtering power of 100 W has the lowest Dit of 7.08 × 1011 cm−2 eV−1, corresponding to the highest conversion efficiency (η) of 4.30 % [short circuit current density (Jsc): 18.06 mA cm−2, Voc: 390 mV, FF: 61.1 %, series resistance (Rs): 4.3 Ωcm2 and shunt resistance (Rsh): 478.75 Ωcm2]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 %/ °C (Jsc: +0.07 %/°C, Voc: −0.52 %/°C and FF: −0.29 %/°C) when compared with conventional solar cells. Further improvement in the Dit of the cell is highly imperative for developing p-Ni1−xO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 755-761 |
| 頁數 | 7 |
| 期刊 | Journal of Materials Science: Materials in Electronics |
| 卷 | 26 |
| 發行號 | 2 |
| DOIs | |
| 出版狀態 | Published - 2014 一月 1 |
指紋
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
引用此文
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Effect of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells. / Hsu, Feng Hao; Wang, Na Fu; Tsai, Yu Zen; Chien, Ming Hao; Houng, Mau Phon.
於: Journal of Materials Science: Materials in Electronics, 卷 26, 編號 2, 01.01.2014, p. 755-761.研究成果: Article
TY - JOUR
T1 - Effect of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells
AU - Hsu, Feng Hao
AU - Wang, Na Fu
AU - Tsai, Yu Zen
AU - Chien, Ming Hao
AU - Houng, Mau Phon
PY - 2014/1/1
Y1 - 2014/1/1
N2 - This study investigates the effects of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density (Dit), resulting in the lowering of open circuit voltage (Voc) and fill factor (FF). The cell fabricated at a sputtering power of 100 W has the lowest Dit of 7.08 × 1011 cm−2 eV−1, corresponding to the highest conversion efficiency (η) of 4.30 % [short circuit current density (Jsc): 18.06 mA cm−2, Voc: 390 mV, FF: 61.1 %, series resistance (Rs): 4.3 Ωcm2 and shunt resistance (Rsh): 478.75 Ωcm2]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 %/ °C (Jsc: +0.07 %/°C, Voc: −0.52 %/°C and FF: −0.29 %/°C) when compared with conventional solar cells. Further improvement in the Dit of the cell is highly imperative for developing p-Ni1−xO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient.
AB - This study investigates the effects of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density (Dit), resulting in the lowering of open circuit voltage (Voc) and fill factor (FF). The cell fabricated at a sputtering power of 100 W has the lowest Dit of 7.08 × 1011 cm−2 eV−1, corresponding to the highest conversion efficiency (η) of 4.30 % [short circuit current density (Jsc): 18.06 mA cm−2, Voc: 390 mV, FF: 61.1 %, series resistance (Rs): 4.3 Ωcm2 and shunt resistance (Rsh): 478.75 Ωcm2]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 %/ °C (Jsc: +0.07 %/°C, Voc: −0.52 %/°C and FF: −0.29 %/°C) when compared with conventional solar cells. Further improvement in the Dit of the cell is highly imperative for developing p-Ni1−xO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient.
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U2 - 10.1007/s10854-014-2460-7
DO - 10.1007/s10854-014-2460-7
M3 - Article
AN - SCOPUS:84925484904
VL - 26
SP - 755
EP - 761
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 2
ER -