Effect of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells

Feng Hao Hsu, Na Fu Wang, Yu Zen Tsai, Ming Hao Chien, Mau Phon Houng

研究成果: Article

摘要

This study investigates the effects of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density (Dit), resulting in the lowering of open circuit voltage (Voc) and fill factor (FF). The cell fabricated at a sputtering power of 100 W has the lowest Dit of 7.08 × 1011 cm−2 eV−1, corresponding to the highest conversion efficiency (η) of 4.30 % [short circuit current density (Jsc): 18.06 mA cm−2, Voc: 390 mV, FF: 61.1 %, series resistance (Rs): 4.3 Ωcm2 and shunt resistance (Rsh): 478.75 Ωcm2]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 %/ °C (Jsc: +0.07 %/°C, Voc: −0.52 %/°C and FF: −0.29 %/°C) when compared with conventional solar cells. Further improvement in the Dit of the cell is highly imperative for developing p-Ni1−xO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient.

原文English
頁(從 - 到)755-761
頁數7
期刊Journal of Materials Science: Materials in Electronics
26
發行號2
DOIs
出版狀態Published - 2014 一月 1

指紋

Sputtering
Heterojunctions
heterojunctions
Solar cells
solar cells
sputtering
cells
Conversion efficiency
Interface states
shunts
Open circuit voltage
coefficients
short circuit currents
open circuit voltage
Short circuit currents
Current density
current density
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

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title = "Effect of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells",
abstract = "This study investigates the effects of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density (Dit), resulting in the lowering of open circuit voltage (Voc) and fill factor (FF). The cell fabricated at a sputtering power of 100 W has the lowest Dit of 7.08 × 1011 cm−2 eV−1, corresponding to the highest conversion efficiency (η) of 4.30 {\%} [short circuit current density (Jsc): 18.06 mA cm−2, Voc: 390 mV, FF: 61.1 {\%}, series resistance (Rs): 4.3 Ωcm2 and shunt resistance (Rsh): 478.75 Ωcm2]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 {\%}/ °C (Jsc: +0.07 {\%}/°C, Voc: −0.52 {\%}/°C and FF: −0.29 {\%}/°C) when compared with conventional solar cells. Further improvement in the Dit of the cell is highly imperative for developing p-Ni1−xO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient.",
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Effect of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells. / Hsu, Feng Hao; Wang, Na Fu; Tsai, Yu Zen; Chien, Ming Hao; Houng, Mau Phon.

於: Journal of Materials Science: Materials in Electronics, 卷 26, 編號 2, 01.01.2014, p. 755-761.

研究成果: Article

TY - JOUR

T1 - Effect of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells

AU - Hsu, Feng Hao

AU - Wang, Na Fu

AU - Tsai, Yu Zen

AU - Chien, Ming Hao

AU - Houng, Mau Phon

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This study investigates the effects of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density (Dit), resulting in the lowering of open circuit voltage (Voc) and fill factor (FF). The cell fabricated at a sputtering power of 100 W has the lowest Dit of 7.08 × 1011 cm−2 eV−1, corresponding to the highest conversion efficiency (η) of 4.30 % [short circuit current density (Jsc): 18.06 mA cm−2, Voc: 390 mV, FF: 61.1 %, series resistance (Rs): 4.3 Ωcm2 and shunt resistance (Rsh): 478.75 Ωcm2]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 %/ °C (Jsc: +0.07 %/°C, Voc: −0.52 %/°C and FF: −0.29 %/°C) when compared with conventional solar cells. Further improvement in the Dit of the cell is highly imperative for developing p-Ni1−xO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient.

AB - This study investigates the effects of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density (Dit), resulting in the lowering of open circuit voltage (Voc) and fill factor (FF). The cell fabricated at a sputtering power of 100 W has the lowest Dit of 7.08 × 1011 cm−2 eV−1, corresponding to the highest conversion efficiency (η) of 4.30 % [short circuit current density (Jsc): 18.06 mA cm−2, Voc: 390 mV, FF: 61.1 %, series resistance (Rs): 4.3 Ωcm2 and shunt resistance (Rsh): 478.75 Ωcm2]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 %/ °C (Jsc: +0.07 %/°C, Voc: −0.52 %/°C and FF: −0.29 %/°C) when compared with conventional solar cells. Further improvement in the Dit of the cell is highly imperative for developing p-Ni1−xO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient.

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