TY - JOUR
T1 - Effect of synthesis conditions on the electrical resistivity of TiSe2
AU - Moya, Jaime M.
AU - Huang, C. L.
AU - Choe, Jesse
AU - Costin, Gelu
AU - Foster, Matthew S.
AU - Morosan, E.
N1 - Funding Information:
J.M.M., J.C., C.L.H., and E.M. acknowledge support from NSF DMREF Grant No. 1629374. The use of the EPMA facility at the Department of Earth Science, Rice University, Houston, Texas, is kindly acknowledged. Furthermore, the authors are grateful for fruitful discussions with A. M. Hallas and M. D. Watson.
Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/8/15
Y1 - 2019/8/15
N2 - Dilute impurities and growth conditions can drastically affect the transport properties of TiSe2, especially below the charge-density-wave transition. In this paper, we discuss the effects of cooling rate, annealing time, and annealing temperature on the transport properties of TiSe2: slow cooling polycrystalline TiSe2 postsynthesis drastically increases the low-temperature resistivity, which is in contrast to the metallic behavior of single-crystalline TiSe2 attributed to charge doping from the residual iodine transport agent. A logarithmic increase of resistivity upon cooling and negative magnetoresistance with a sharp cusp around zero field are observed for the first time for the polycrystalline TiSe2 samples, pointing to weak-localization effects due to low dimensionality. Annealing at low temperatures has a similar, but less drastic effect. Furthermore, rapid quenching of the polycrystalline samples from high temperatures freezes in disorder, leading to a decrease in the low-temperature resistivity.
AB - Dilute impurities and growth conditions can drastically affect the transport properties of TiSe2, especially below the charge-density-wave transition. In this paper, we discuss the effects of cooling rate, annealing time, and annealing temperature on the transport properties of TiSe2: slow cooling polycrystalline TiSe2 postsynthesis drastically increases the low-temperature resistivity, which is in contrast to the metallic behavior of single-crystalline TiSe2 attributed to charge doping from the residual iodine transport agent. A logarithmic increase of resistivity upon cooling and negative magnetoresistance with a sharp cusp around zero field are observed for the first time for the polycrystalline TiSe2 samples, pointing to weak-localization effects due to low dimensionality. Annealing at low temperatures has a similar, but less drastic effect. Furthermore, rapid quenching of the polycrystalline samples from high temperatures freezes in disorder, leading to a decrease in the low-temperature resistivity.
UR - http://www.scopus.com/inward/record.url?scp=85072248083&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072248083&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.3.084005
DO - 10.1103/PhysRevMaterials.3.084005
M3 - Article
AN - SCOPUS:85072248083
VL - 3
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 8
M1 - 084005
ER -