Effect of Ta2N crystallinity on diffusion barrier properties

Hung Chin Chung, Chuan Pu Liu

研究成果: Paper同行評審

摘要

Ta2N thin films deposited at different substrate temperatures onto silicon (001) substrates can produce amorphous and crystalline phase with different preferred orientations. Upon annealing at 500°C for 30min, these films exhibit crystalline phases with the strong preferred orientation from (101) for the film deposited at 500°C to (002) for the film deposited at higher temperatures. Subsequently, the viability of employing them as the diffusion barriers between copper and silicon is investigated by annealing in a vacuum chamber at 500, 600, 700, and 800°C for 30 min following sputtering, where the thicknesses of Cu and Ta2N are fixed at 150nm and 100nm, respectively. The results show that the chemical reactions of Ta2N with Cu and Si and the structural stability at high temperatures are dependent on the crystalliniry of Ta2N and the Ta2N phase with the highest (002) preferred orientation exhibits the highest structural stability. This suggests that the (002) orientation in the poly-Ta2N can prevent copper diffusion more effectively.

原文English
頁面161-166
頁數6
出版狀態Published - 2003 一月 1
事件Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States
持續時間: 2003 十月 122003 十月 17

Other

OtherCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
國家/地區United States
城市Orlando, FL
期間03-10-1203-10-17

All Science Journal Classification (ASJC) codes

  • 電化學

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