Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors

Yu Chih Huang, Po Yu Yang, Hau Yuan Huang, Shui Jinn Wang, Huang Chung Cheng

研究成果: Article

14 引文 斯高帕斯(Scopus)

摘要

The in?uence of the thermal annealing on the amorphous indium gallium zinc oxide (a-IGZO) thin-?lm transistors (TFTs) under different ambient gases has been systematically addressed. The chemical bonding states and transfer characteristics of a-IGZO TFTs show evident dependence on the annealing ambient gas. For the a-IGZO TFTs in the oxygen ambient annealing at 250 °C for 30 mins exhibited a maximum ?eld effect mobility (max μFE) of 9.36 cm 2/V ̇ s, on/off current ratio of 6.12 × 10 10, and a subthreshold slope (SS) of 0.21 V/decade. Respectively, the as-deposited ones without annealing possess a max μFE of 6.61 cm 2/V ̇ s, on/off current ratio of 4.58 × 10 8, and a SS of 0.46 V/decade. In contrast, the a-IGZO TFTs annealed at 250 °C for 30 mins in the nitrogen ambient would be degraded to have a max μ FE of 0.18 cm 2/V ̇ s, on/off current ratio of 2.22 × 10 4, and a SS of 7.37 V/decade, corresponding. It is attributed to the content of the oxygen vacancies, according the x-ray photoelectron spectroscopy (XPS) analyze of the three different samples.

原文English
頁(從 - 到)5625-5630
頁數6
期刊Journal of Nanoscience and Nanotechnology
12
發行號7
DOIs
出版狀態Published - 2012 七月 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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