Effect of thermal annealing on the photoluminescence of β-FeSi2 films on Si substrate

Kenji Yamaguchi, Kenichiro Shimura, Haruhiko Udono, Masato Sasase, Hiroyuki Yamamoto, Shin ichi Shamoto, Kiichi Hojou

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

In order to improve the photoluminescence (PL) of semiconducting β-FeSi2 films, as-grown films were thermally annealed under various conditions. The films were fabricated either by an ion beam sputter deposition (IBSD) or a molecular beam epitaxy (MBE) method. For both IBSD-grown and MBE-grown films, high temperature annealing in a flow of Ar gas or air led to drastic enhancement of PL intensity. Furthermore, PL characteristics were found to depend on the annealing atmosphere, where it was shown that air was more effective than Ar gas.

原文English
頁(從 - 到)367-370
頁數4
期刊Thin Solid Films
508
發行號1-2
DOIs
出版狀態Published - 2006 六月 5

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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