Effect of varied undoped GaN thickness on ESD and optical properties of GaN-based LEDs

Tsung Hsun Chiang, Chun Kai Wang, Shoou Jinn Chang, Yu Zung Chiou, Tsun Kai Ko, Tien Kun Lin, Sheng Po Chang

研究成果: Article

5 引文 (Scopus)

摘要

The optical property and electrostatic discharge (ESD) endurance of GaN-based light-emitting diodes (LEDs) with varied undoped GaN thickness are studied and demonstrated. As the undoped GaN thickness increased, the generation of V-shaped defects in the active region was suppressed. Therefore, the output power for a 6-μm-thick undoped GaN layer would be enhanced remarkably due to the reduction of nonradiative recombination ratio within the active region. On the other hand, under a reverse ESD pulse voltage of 5.5 kV, the survival rate of the LEDs with an undoped GaN layer thickness of 1.5, 4, and 6 μm were 75%, 65%, and 55%, respectively. It was found that the ESD endurance for a 1.5-μm-thick undoped GaN layer with higher internal capacitance was obviously better than others. This could be related to the built-in electric field of LEDs induced by spontaneous polarization field.

原文English
文章編號6146401
頁(從 - 到)800-802
頁數3
期刊IEEE Photonics Technology Letters
24
發行號10
DOIs
出版狀態Published - 2012 四月 24

指紋

Electrostatic discharge
Light emitting diodes
light emitting diodes
Optical properties
endurance
electrostatics
optical properties
Durability
Capacitance
capacitance
Electric fields
Polarization
Defects
electric fields
output
defects
Electric potential
electric potential
polarization
pulses

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Chiang, Tsung Hsun ; Wang, Chun Kai ; Chang, Shoou Jinn ; Chiou, Yu Zung ; Ko, Tsun Kai ; Lin, Tien Kun ; Chang, Sheng Po. / Effect of varied undoped GaN thickness on ESD and optical properties of GaN-based LEDs. 於: IEEE Photonics Technology Letters. 2012 ; 卷 24, 編號 10. 頁 800-802.
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abstract = "The optical property and electrostatic discharge (ESD) endurance of GaN-based light-emitting diodes (LEDs) with varied undoped GaN thickness are studied and demonstrated. As the undoped GaN thickness increased, the generation of V-shaped defects in the active region was suppressed. Therefore, the output power for a 6-μm-thick undoped GaN layer would be enhanced remarkably due to the reduction of nonradiative recombination ratio within the active region. On the other hand, under a reverse ESD pulse voltage of 5.5 kV, the survival rate of the LEDs with an undoped GaN layer thickness of 1.5, 4, and 6 μm were 75{\%}, 65{\%}, and 55{\%}, respectively. It was found that the ESD endurance for a 1.5-μm-thick undoped GaN layer with higher internal capacitance was obviously better than others. This could be related to the built-in electric field of LEDs induced by spontaneous polarization field.",
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Effect of varied undoped GaN thickness on ESD and optical properties of GaN-based LEDs. / Chiang, Tsung Hsun; Wang, Chun Kai; Chang, Shoou Jinn; Chiou, Yu Zung; Ko, Tsun Kai; Lin, Tien Kun; Chang, Sheng Po.

於: IEEE Photonics Technology Letters, 卷 24, 編號 10, 6146401, 24.04.2012, p. 800-802.

研究成果: Article

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