Effect of varied undoped GaN thickness on ESD and optical properties of GaN-based LEDs

Tsung Hsun Chiang, Chun Kai Wang, Shoou Jinn Chang, Yu Zung Chiou, Tsun Kai Ko, Tien Kun Lin, Sheng Po Chang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The optical property and electrostatic discharge (ESD) endurance of GaN-based light-emitting diodes (LEDs) with varied undoped GaN thickness are studied and demonstrated. As the undoped GaN thickness increased, the generation of V-shaped defects in the active region was suppressed. Therefore, the output power for a 6-μm-thick undoped GaN layer would be enhanced remarkably due to the reduction of nonradiative recombination ratio within the active region. On the other hand, under a reverse ESD pulse voltage of 5.5 kV, the survival rate of the LEDs with an undoped GaN layer thickness of 1.5, 4, and 6 μm were 75%, 65%, and 55%, respectively. It was found that the ESD endurance for a 1.5-μm-thick undoped GaN layer with higher internal capacitance was obviously better than others. This could be related to the built-in electric field of LEDs induced by spontaneous polarization field.

原文English
文章編號6146401
頁(從 - 到)800-802
頁數3
期刊IEEE Photonics Technology Letters
24
發行號10
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

指紋

深入研究「Effect of varied undoped GaN thickness on ESD and optical properties of GaN-based LEDs」主題。共同形成了獨特的指紋。

引用此