@inproceedings{8e3c1abde0c54f19b69ee3f0496220f4,
title = "Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD",
abstract = "The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90° interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.",
author = "Hsiao, {Chih Jen} and Liu, {Chun Kuan} and Huynh, {Sa Hoang} and Minh, {Thien Huu Ha} and Yu, {Hung Wei} and Nguyen, {Hong Quan} and Maa, {Jer Shen} and Chang, {Shoou Jinn} and Chang, {Edward Yi}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 ; Conference date: 27-08-2014 Through 29-08-2014",
year = "2014",
month = oct,
day = "10",
doi = "10.1109/SMELEC.2014.6920896",
language = "English",
series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "456--458",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
address = "United States",
}