Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

Jia Ling Wu, Yu Cheng Chen, Han Yu Lin, Sheng Yuan Chu, Chia Chiang Chang, Chin Jyi Wu, Yung Der Juang

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from $2.063× 10-3 and 2.203× 10-3 to 1.74× 10-3 and 1.966× 10-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m2, respectively.

原文English
文章編號6527295
頁(從 - 到)2324-2330
頁數7
期刊IEEE Transactions on Electron Devices
60
發行號7
DOIs
出版狀態Published - 2013 七月 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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