Effectiveness of plasma nitrided silicon oxynitride as a barrier layer between high k materials and Si substrates

Yi Sheng Lai, J. S. Chen

研究成果: Conference article同行評審

摘要

In this work, low temperature (300 - 450°C) plasma nitridation was conducted using N2O and NH3 atmosphere to produce an ultrathin SiOxNy layer. The bonding structure, distribution, and quantity of nitrogen and their effects on the growth kinetic of SiOxNy layers are studied by X-ray photoelectron spectroscopy (XPS). It is found that nitrogen atoms pile at the SiOxNy/Si interface at the very beginning of plasma N2O and NH3 nitridation. Due to the lack of additional Si source and low diffusivity of O or N atoms at low temperature, plasma nitridation will form a self-limited growth of SiOxNy layer. Thermal stability of the interlayer between ultrathin Ta2O5films on bare Si, plasma N2O nitrided Si, and plasma NH3 nitrided Si is also studied.

原文English
頁(從 - 到)221-226
頁數6
期刊Materials Research Society Symposium - Proceedings
745
DOIs
出版狀態Published - 2002 1月 1
事件Novel Materials and Processes for Advanced CMOS - Boston, MA, United States
持續時間: 2002 12月 22002 12月 4

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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