Effects of Ambient/Carrier Gas on Amorphous InGaZnO-Based Thin-Film Transistors Using Ultrasonic Spray Pyrolysis Deposition

Han Yin Liu, Che Lun Chang, Pei Huang Hsu, Wei Ting Chen, Teng Yuan Chang, Ching Sung Lee, Shun Cheng Shih, Wei Chou Hsu

研究成果: Article同行評審

摘要

This study investigates how ambient/carrier gases affect the material characteristics of amorphous indium-gallium-zinc oxide (a-InGaZnO) thin films deposited using the ultrasonic spray pyrolysis deposition (USPD) method. Nitrogen and air are used as the ambient/carrier gases in this study. The crystallinity, oxygen deficiency, energy bandgap, and trap level in the a-InGaZnO thin films are analyzed. The performance of the thin-film transistors (TFTs) based on a-InGaZnO with different ambient/carrier gases is investigated as well. It is found that oxygen deficiency is suppressed when air is used as the ambient/carrier gas. When nitrogen is used as the ambient/carrier gas to deposit a-InGaZnO thin film, the TFT shows higher field-effect mobility and saturation mobility. However, when the a-InGaZnO thin film is deposited with air as the ambient/carrier gas, the subthreshold swing, ON-/ OFF-current ratio, interface trap density, and stability of the TFT are improved. This study demonstrates how ambient/carrier gases in the USPD system affect the performance of a-InGaZnO TFT.

原文English
文章編號9420151
頁(從 - 到)2729-2735
頁數7
期刊IEEE Transactions on Electron Devices
68
發行號6
DOIs
出版狀態Published - 2021 六月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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