Effects of buffer layer growth conditions on GaN epilayer quality by MOCVD

Fuh Shyang Juang, Yan Kuin Su, Shoou Jinn Chang, T. K. Chu, C. S. Chen, L. W. Chi, K. T. Lam

研究成果: Conference article同行評審

摘要

We have found that the electrical and optical properties of GaN epilayers strongly depend on buffer TMGa flow rates and NH3 flow rates. At low flow rate of 4 sccm, the buffer layer quality was good so the concentrations of undoped GaN epilayers decreased and a stronger band-edge emission of 362 nm can be observed in photoluminescence spectra. The carrier density of the films can be reduced from 1018 to 1017 cm-3 by increasing the NH3 flow rate from 0.5 up to 1 SLM and comparatively increased the near-band-edge emission. So, with a NH3 flow rate as high as 1 SLM, the GaN epilayers with good optical quality can be obtained. The excitation power density of He-Cd laser influences the photoluminescence property of GaN epilayers. At high excitation power density of 637 W/cm2, the near-band-edge luminescence (362 nm) is dominant and the deep level luminescence (near 550 nm) appears very weak. But at low excitation power density, the luminescence from defect yellow band levels is stronger than the near-band-edge transitions.

原文English
頁(從 - 到)218-223
頁數6
期刊Proceedings of SPIE - The International Society for Optical Engineering
3938
出版狀態Published - 2000
事件Light-Emitting Diodes: Research, Manufacturing, and Applications IV - San Jose, CA, USA
持續時間: 2000 一月 262000 一月 27

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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