We have found that the electrical and optical properties of GaN epilayers strongly depend on buffer TMGa flow rates and NH3 flow rates. At low flow rate of 4 sccm, the buffer layer quality was good so the concentrations of undoped GaN epilayers decreased and a stronger band-edge emission of 362 nm can be observed in photoluminescence spectra. The carrier density of the films can be reduced from 1018 to 1017 cm-3 by increasing the NH3 flow rate from 0.5 up to 1 SLM and comparatively increased the near-band-edge emission. So, with a NH3 flow rate as high as 1 SLM, the GaN epilayers with good optical quality can be obtained. The excitation power density of He-Cd laser influences the photoluminescence property of GaN epilayers. At high excitation power density of 637 W/cm2, the near-band-edge luminescence (362 nm) is dominant and the deep level luminescence (near 550 nm) appears very weak. But at low excitation power density, the luminescence from defect yellow band levels is stronger than the near-band-edge transitions.
|頁（從 - 到）||218-223|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 2000|
|事件||Light-Emitting Diodes: Research, Manufacturing, and Applications IV - San Jose, CA, USA|
持續時間: 2000 1月 26 → 2000 1月 27
All Science Journal Classification (ASJC) codes