Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers

Parvaneh Ravadgar, Ray Hua Horng, Shu De Yao, Hsin Ying Lee, Bing Rui Wu, Sin Liang Ou, Li Wei Tu

研究成果: Article同行評審

38 引文 斯高帕斯(Scopus)

摘要

This study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivity and the cathodoluminescence (CL) properties of β-Ga2O3 epilayers. A synchrotron high-resolution X-ray technique was used to understand the crystalline structure of samples. Rutherford backscattering spectroscopy was used to determine the net chemical composition of the samples to examine the type and ratio of their possible point defects. The results show that in functional time-dependent photoresponsivity of photodetectors based on β-Ga2O3 epilayers, point defects contribution overcomes the contribution of crystallinity. However, the crystalline structure affects the intensities and emission regions of CL spectra more than point defects.

原文English
頁(從 - 到)24599-24610
頁數12
期刊Optics Express
21
發行號21
DOIs
出版狀態Published - 2013 十月 21

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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