Effects of Cu2S sintering aid on the formation of CuInS2 coatings from single crystal Cu2In2O5 nanoparticles

Chia Ying Su, Dillip K. Mishra, Chiu Yen Chiu, Jyh Ming Ting

研究成果: Article

7 引文 (Scopus)

摘要

This article reports the sulfurization of single crystalline Cu2In2O5 nanoparticles (NPs) for the formation of CuInS2 (CIS) coatings. Cu2In2O5 NPs were synthesized using a chemical route. Thus formed NPs were applied to Mo-coated glass substrate by a doctor-blading technique. After the doctor-blading, coatings were sulfurized under 500torr of H2S at various temperatures. Selected doctor-bladed samples were heat treated at 430°C in air for 30min for the removal of carbon residual prior to the sulfurization. During the sulfurization, Cu2S (melting point 435°C) was used as the sintering aid. The weight ratio of Cu2S to Cu2In2O5 was varied. The effect of Cu2S on the CIS crystalline structure was explored using Raman analysis. It was found that Cu2S not only improves the sintering but also promotes the formation of desired CIS-chalcopyrite structure and reduces the impurity phase in the resulting CIS coatings.

原文English
頁(從 - 到)517-520
頁數4
期刊Surface and Coatings Technology
231
DOIs
出版狀態Published - 2013 九月 25

指紋

sintering
Sintering
Single crystals
Nanoparticles
coatings
Coatings
nanoparticles
single crystals
Crystalline materials
melting points
Melting point
Carbon
routes
Impurities
Glass
heat
impurities
glass
carbon
air

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

引用此文

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title = "Effects of Cu2S sintering aid on the formation of CuInS2 coatings from single crystal Cu2In2O5 nanoparticles",
abstract = "This article reports the sulfurization of single crystalline Cu2In2O5 nanoparticles (NPs) for the formation of CuInS2 (CIS) coatings. Cu2In2O5 NPs were synthesized using a chemical route. Thus formed NPs were applied to Mo-coated glass substrate by a doctor-blading technique. After the doctor-blading, coatings were sulfurized under 500torr of H2S at various temperatures. Selected doctor-bladed samples were heat treated at 430°C in air for 30min for the removal of carbon residual prior to the sulfurization. During the sulfurization, Cu2S (melting point 435°C) was used as the sintering aid. The weight ratio of Cu2S to Cu2In2O5 was varied. The effect of Cu2S on the CIS crystalline structure was explored using Raman analysis. It was found that Cu2S not only improves the sintering but also promotes the formation of desired CIS-chalcopyrite structure and reduces the impurity phase in the resulting CIS coatings.",
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AU - Su, Chia Ying

AU - Mishra, Dillip K.

AU - Chiu, Chiu Yen

AU - Ting, Jyh Ming

PY - 2013/9/25

Y1 - 2013/9/25

N2 - This article reports the sulfurization of single crystalline Cu2In2O5 nanoparticles (NPs) for the formation of CuInS2 (CIS) coatings. Cu2In2O5 NPs were synthesized using a chemical route. Thus formed NPs were applied to Mo-coated glass substrate by a doctor-blading technique. After the doctor-blading, coatings were sulfurized under 500torr of H2S at various temperatures. Selected doctor-bladed samples were heat treated at 430°C in air for 30min for the removal of carbon residual prior to the sulfurization. During the sulfurization, Cu2S (melting point 435°C) was used as the sintering aid. The weight ratio of Cu2S to Cu2In2O5 was varied. The effect of Cu2S on the CIS crystalline structure was explored using Raman analysis. It was found that Cu2S not only improves the sintering but also promotes the formation of desired CIS-chalcopyrite structure and reduces the impurity phase in the resulting CIS coatings.

AB - This article reports the sulfurization of single crystalline Cu2In2O5 nanoparticles (NPs) for the formation of CuInS2 (CIS) coatings. Cu2In2O5 NPs were synthesized using a chemical route. Thus formed NPs were applied to Mo-coated glass substrate by a doctor-blading technique. After the doctor-blading, coatings were sulfurized under 500torr of H2S at various temperatures. Selected doctor-bladed samples were heat treated at 430°C in air for 30min for the removal of carbon residual prior to the sulfurization. During the sulfurization, Cu2S (melting point 435°C) was used as the sintering aid. The weight ratio of Cu2S to Cu2In2O5 was varied. The effect of Cu2S on the CIS crystalline structure was explored using Raman analysis. It was found that Cu2S not only improves the sintering but also promotes the formation of desired CIS-chalcopyrite structure and reduces the impurity phase in the resulting CIS coatings.

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JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

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