Effects of deposition and post-annealing conditions on electrical properties and thermal stability of TiAlN films by ion beam sputter deposition

Sheng Yi Lee, Sheng Chang Wang, Jen-Sue Chen, Jow-Lay Huang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

TiAlN films were deposited by ion beam sputter deposition (IBSD) using a Ti-Al (90/10) alloy target in a nitrogen atmosphere on thermal oxidized Si wafers. Effects of ion beam voltage, substrate temperature (Ts) and post-annealing conditions on electrical properties and oxidation resistance of TiAlN films were studied. According to the experimental results, the proper kinetic energy provided good crystallinity and a dense structure of the films. Because of their better crystallinity and predomination of (200) planes, TiAlN films deposited with 900 V at low Ts (50 °C) have shown lower resistivity than those at high Ts (250 °C). They also showed better oxidation resistance. If the beam voltage was too high, it caused some damage to the film surfaces, which caused poor oxidation resistance of films. When sufficient kinetic energy was provided by the beam voltage, the mobility of adatoms was too high due to their extra thermal energy, thus reducing the crystallinity and structure density of the films. A beam voltage of 900 V and a substrate temperature of 50 °C were the optimum deposition conditions used in this research. They provided good oxidation resistance and low electrical resistivity for IBSD TiAlN films.

原文English
頁(從 - 到)1069-1073
頁數5
期刊Thin Solid Films
515
發行號3
DOIs
出版狀態Published - 2006 十一月 23

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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