Effects of deposition termination on Cu2ZnSnSe4device characteristics

I. L. Repins, J. V. Li, A. Kanevce, C. L. Perkins, K. X. Steirer, J. Pankow, G. Teeter, D. Kuciauskas, C. Beall, C. Dehart, J. Carapella, B. Bob, J. S. Park, S. H. Wei

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28 引文 斯高帕斯(Scopus)

摘要

Co-evaporated Cu2ZnSnSe4(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

原文English
頁(從 - 到)184-187
頁數4
期刊Thin Solid Films
582
DOIs
出版狀態Published - 2015 五月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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