Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs

W. N. Lee, Y. F. Chen, J. H. Huang, X. J. Guo, C. T. Kuo

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, the effects of doping type and concentration on arsenic precipitation in low-temperature-grown GaAs upon postgrowth annealing at 600, 700, and 800 °C were investigated. Three undoped/Si-doped/undoped (i-n-i) regions and three undoped/Be-doped/undoped (i-p-i) regions were grown by low-temperature molecular beam epitaxy. The results show that arsenic precipitation is dependent on doping type and doping concentration. Arsenic depletion was observed in all Be-doped layers for all annealing temperatures. However, a "dual" arsenic precipitation behavior was observed in Si-doped layers: As accumulates in [Si] =2× 1018 cm-3 doped layers, while it depletes in [Si] =2× 1016 and 2× 1017 cm-3 doped layers. We attribute this "dual" As precipitation phenomenon in Si-doped layers to the different depletion depths.

原文English
頁(從 - 到)2514-2517
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
23
發行號6
DOIs
出版狀態Published - 2005 十一月

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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