Effects of drift-region design on the reliability of integrated high-voltage LDMOS transistors

Jone F. Chen, Shiang Yu Chen, Kuen Shiuan Tian, Kuo Ming Wu, Yan Kuin Su, C. M. Liu, S. L. Hsu

研究成果: Conference contribution

4 引文 斯高帕斯(Scopus)

摘要

Effects of drift-region design on the hot-carrier reliability of n-channel integrated high-voltage lateral diffused MOS (LDMOS) transistors are investigated. LDMOS devices with various dosages of n-type drain drift (NDD) implant and various drift-region lengths (Ld) are studied. Results show that higher NDD dosage can reduce hot-carrier induced on-resistance (R on) degradation. The shift in damage location is suggested to be the main cause. In addition, longer Ld can reduce Ron degradation significantly because of less lateral electric field. Our analysis indicates that higher NDD dosage and longer Ld are effective for improving the device lifetime of the LDMOS transistors.

原文English
主出版物標題Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
頁面121-124
頁數4
DOIs
出版狀態Published - 2007 十二月 1
事件2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States
持續時間: 2007 五月 302007 六月 1

出版系列

名字Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
國家/地區United States
城市Austin, TX
期間07-05-3007-06-01

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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