Effects of electrical and temperature stress on polysilicon resistors for CMOS technology applications

Kong Beng Thei, Hung Ming Chuang, Sheng Fu Tsai, Chun Tsen Lu, Xin Da Liao, Kuan Ming Lee, Wen Chau Liu

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The effects of electrical and temperature stress on polysilicon resistors for CMOS technology applications are studied. Under a fixed square number, the peak current density (Jpeak) is increased with decreasing the polysilicon resistor width W. The time-to-fail value of the polysilicon resistor is decreased with increasing the electrical and temperature stress. A simple empirical formula is proposed in this study to predict the maximum current density (Jmax) and lifetime of polysilicon resistors. Under a fixed current density (1.0 × 106 A cm-2), the activation energies (Ea) for n+ and p+ polysilicon resistors at different temperatures are 0.67 and 0.48 eV, respectively. In addition, at a fixed temperature of 473 K, the current factors for n+ and p+ polysilicon resistors are 1.57 × 10-5 and 1.30 × 10-5 cm2/A, respectively, under different current densities. Therefore, these precise reliability performances offer promise for ULSI design and fabrication.

原文English
頁(從 - 到)289-296
頁數8
期刊Superlattices and Microstructures
31
發行號6
DOIs
出版狀態Published - 2002 6月

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 電氣與電子工程

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