TY - JOUR
T1 - Effects of Film Orientation on Power Consumption, Thermal Stability, and Reliability of Aluminum Nitride Resistive Random Access Memory Devices
AU - Lin, Chun Cheng
AU - Liou, Huei Yu
AU - Hung, Pei Hao
AU - Chu, Sheng Yuan
AU - Huang, Chih Yu
AU - Hong, Cheng Shong
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan, Republic of China, under Grant Nos. MOST 107-2218-E-492-006 and 108-2218-E-006-013.
Funding Information:
Manuscript received June 6, 2019; accepted September 1, 2019. Date of publication September 20, 2019; date of current version October 29, 2019. This work was supported by the Ministry of Science and Technology, Taiwan, Republic of China, under Grant Nos. MOST 107-2218-E-492-006 and 108-2218-E-006-013. The review of this article was arranged by Editor U. E. Avci. (Corresponding authors: Chun-Cheng Lin; Sheng-Yuan Chu.) C.-C. Lin is with the Department of Mathematic and Physical Sciences, General Education, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (e-mail: [email protected]).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2019/11
Y1 - 2019/11
N2 - The power consumption (PC), window margin (WM), thermal stability (TS), and reliability [i.e., endurance (EN) and retention-time (RT)] of aluminum nitride (AlN) resistive random access memory (RRAM) devices with different film orientations [i.e., amorphous, (100)-and (002)-oriented] are investigated. It is shown that the charge carrier transport mechanism of the three devices is dominated by Ohmic behavior under low electric fields and the trap-controlled space charge limited current (TC-SCLC) model under high electric fields. Among the three devices, the (002)-oriented AlN sample provides the best overall PC, WM, TS, EN, and RT performance due to its c-axis orientation, which is favorable for the formation and rupture of the vertically arranged conductive filaments (CFS) in the AlN film.
AB - The power consumption (PC), window margin (WM), thermal stability (TS), and reliability [i.e., endurance (EN) and retention-time (RT)] of aluminum nitride (AlN) resistive random access memory (RRAM) devices with different film orientations [i.e., amorphous, (100)-and (002)-oriented] are investigated. It is shown that the charge carrier transport mechanism of the three devices is dominated by Ohmic behavior under low electric fields and the trap-controlled space charge limited current (TC-SCLC) model under high electric fields. Among the three devices, the (002)-oriented AlN sample provides the best overall PC, WM, TS, EN, and RT performance due to its c-axis orientation, which is favorable for the formation and rupture of the vertically arranged conductive filaments (CFS) in the AlN film.
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U2 - 10.1109/TED.2019.2939365
DO - 10.1109/TED.2019.2939365
M3 - Article
AN - SCOPUS:85074453728
SN - 0018-9383
VL - 66
SP - 4716
EP - 4721
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 11
M1 - 8845656
ER -