Effects of Film Orientation on Power Consumption, Thermal Stability, and Reliability of Aluminum Nitride Resistive Random Access Memory Devices

Chun Cheng Lin, Huei Yu Liou, Pei Hao Hung, Sheng Yuan Chu, Chih Yu Huang, Cheng Shong Hong

研究成果: Article

摘要

The power consumption (PC), window margin (WM), thermal stability (TS), and reliability [i.e., endurance (EN) and retention-time (RT)] of aluminum nitride (AlN) resistive random access memory (RRAM) devices with different film orientations [i.e., amorphous, (100)-and (002)-oriented] are investigated. It is shown that the charge carrier transport mechanism of the three devices is dominated by Ohmic behavior under low electric fields and the trap-controlled space charge limited current (TC-SCLC) model under high electric fields. Among the three devices, the (002)-oriented AlN sample provides the best overall PC, WM, TS, EN, and RT performance due to its c-axis orientation, which is favorable for the formation and rupture of the vertically arranged conductive filaments (CFS) in the AlN film.

原文English
文章編號8845656
頁(從 - 到)4716-4721
頁數6
期刊IEEE Transactions on Electron Devices
66
發行號11
DOIs
出版狀態Published - 2019 十一月

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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