摘要
In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectricity but also significantly improve FeFET electrostatics. The experimental results indicate that FeFET with a narrow width shows weaker ferroelectric properties, and SS of sub-60 mV/dec with ID change less than two orders of magnitude. However, FeFET with a broad channel width reveals stronger ferroelectric properties, and SS of sub-60 mV/dec is over 2 orders of magnitude of Id. Finally, typical voltage transfer characteristics (VTCs) of a FeFET CMOS inverter with double sweeps at various VD from 0.6 to 2 V are demonstrated. The results show that hysteresis in a FeFET CMOS inverter could have both clockwise (CW) and counter-clockwise (CCW) loops.
原文 | English |
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文章編號 | 9063644 |
頁(從 - 到) | 474-480 |
頁數 | 7 |
期刊 | IEEE Journal of the Electron Devices Society |
卷 | 8 |
DOIs | |
出版狀態 | Published - 2020 |
All Science Journal Classification (ASJC) codes
- 生物技術
- 電子、光磁材料
- 電氣與電子工程