Effects of gate sidewall recess on Al0.2Ga0.8 As/In0.15Ga0.85As PHEMTs by citric-based selective etchant

K. F. Yarn, C. I. Liao, Y. H. Wang, M. P. Houng

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this report, an effective and simple method of selective gate sidewall recess is proposed to expose the low barrier channel at mesa sidewalls during device isolation for Al0.2Ga0.8 As/In0.15Ga0.85As PHEMTs (pseudomorphic high electron mobility transistors) by using a newly developed citric-acid-based etchant with high selectivity (>250) for GaAs/ Al0.2Ga0.8As or In0.15Ga0.85 As/Al0.2G0.8As interfaces. After sidewall recess, a revealed cavity will exist between the In0.15 Ga0.85As layers and gate metals. Devices with 1 × 100 μm2 exhibit a very low gate leakage current of 2.4 μA/mm even at VGD = -10 V and high gate breakdown voltage over 25 V. As compared to that of no sidewall recess, nearly two orders of reduction in magnitude of gate leakage current and 100% improvement in gate breakdown voltage can be achieved.

原文English
頁(從 - 到)529-532
頁數4
期刊Journal of Materials Science: Materials in Electronics
16
發行號8
DOIs
出版狀態Published - 2005 八月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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