Effects of gate sidewall recess on Al0.2Ga0.8 As/In0.15Ga0.85As PHEMTs by citric-based selective etchant

K. F. Yarn, C. I. Liao, Y. H. Wang, M. P. Houng

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)


深入研究「Effects of gate sidewall recess on Al<sub>0.2</sub>Ga<sub>0.8</sub> As/In<sub>0.15</sub>Ga<sub>0.85</sub>As PHEMTs by citric-based selective etchant」主題。共同形成了獨特的指紋。

Physics & Astronomy

Chemical Compounds

Engineering & Materials Science