Effects of Ge-and Sb-doping and annealing on the tunable bandgaps of SnS films

Hsuan Tai Hsu, Ming Hung Chiang, Chen Hao Huang, Wen Tai Lin, Yaw Shyan Fu, Tzung Fang Guo

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25-1.35 and 1.30-1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200-350°C in N2, the bandgaps of 200°C-annealed films remain unchanged, while those of 300°C- and 350°C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively.

原文English
頁(從 - 到)37-40
頁數4
期刊Thin Solid Films
584
DOIs
出版狀態Published - 2015 六月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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