Effects of H2 in GaN barrier spacer layer of InGaN/GaN multiple quantum-well light-emitting diodes

Wei Chih Lai, Ya Yu Yang

研究成果: Article

摘要

We demonstrate the optoelectrical characteristics of thick well short-period InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with H2 in GaN barrier spacer layer. Introducing ramped H}} 2 in the GaN barrier spacer layer creates a wide range of severe well thickness variation randomly distributed in the thick InGaN well. The thickness-fluctuated InGaN well would effectively increase the carrier concentration in the region of the thick InGaN well region during the current injection. Moreover, the ramped H2 in GaN barrier spacer layer would improve the interface and crystal quality of thick well short-period InGaN/GaN MQWs LEDs. Therefore, compared with traditional long-period InGaN/GaN MQW LEDs, thick well short-period InGaN/GaN MQW LEDs with fluctuated InGaN well thickness enhance output power (25.6% at 20 mA) and improve efficiency droop from 55.0% to 36.7%.

原文English
文章編號6374703
頁(從 - 到)234-238
頁數5
期刊IEEE/OSA Journal of Display Technology
9
發行號4
DOIs
出版狀態Published - 2013 一月 1

指紋

spacers
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Carrier concentration
injection
Crystals
output
crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

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title = "Effects of H2 in GaN barrier spacer layer of InGaN/GaN multiple quantum-well light-emitting diodes",
abstract = "We demonstrate the optoelectrical characteristics of thick well short-period InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with H2 in GaN barrier spacer layer. Introducing ramped H}} 2 in the GaN barrier spacer layer creates a wide range of severe well thickness variation randomly distributed in the thick InGaN well. The thickness-fluctuated InGaN well would effectively increase the carrier concentration in the region of the thick InGaN well region during the current injection. Moreover, the ramped H2 in GaN barrier spacer layer would improve the interface and crystal quality of thick well short-period InGaN/GaN MQWs LEDs. Therefore, compared with traditional long-period InGaN/GaN MQW LEDs, thick well short-period InGaN/GaN MQW LEDs with fluctuated InGaN well thickness enhance output power (25.6{\%} at 20 mA) and improve efficiency droop from 55.0{\%} to 36.7{\%}.",
author = "Lai, {Wei Chih} and Yang, {Ya Yu}",
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AU - Lai, Wei Chih

AU - Yang, Ya Yu

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N2 - We demonstrate the optoelectrical characteristics of thick well short-period InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with H2 in GaN barrier spacer layer. Introducing ramped H}} 2 in the GaN barrier spacer layer creates a wide range of severe well thickness variation randomly distributed in the thick InGaN well. The thickness-fluctuated InGaN well would effectively increase the carrier concentration in the region of the thick InGaN well region during the current injection. Moreover, the ramped H2 in GaN barrier spacer layer would improve the interface and crystal quality of thick well short-period InGaN/GaN MQWs LEDs. Therefore, compared with traditional long-period InGaN/GaN MQW LEDs, thick well short-period InGaN/GaN MQW LEDs with fluctuated InGaN well thickness enhance output power (25.6% at 20 mA) and improve efficiency droop from 55.0% to 36.7%.

AB - We demonstrate the optoelectrical characteristics of thick well short-period InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with H2 in GaN barrier spacer layer. Introducing ramped H}} 2 in the GaN barrier spacer layer creates a wide range of severe well thickness variation randomly distributed in the thick InGaN well. The thickness-fluctuated InGaN well would effectively increase the carrier concentration in the region of the thick InGaN well region during the current injection. Moreover, the ramped H2 in GaN barrier spacer layer would improve the interface and crystal quality of thick well short-period InGaN/GaN MQWs LEDs. Therefore, compared with traditional long-period InGaN/GaN MQW LEDs, thick well short-period InGaN/GaN MQW LEDs with fluctuated InGaN well thickness enhance output power (25.6% at 20 mA) and improve efficiency droop from 55.0% to 36.7%.

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