Effects of inelastic scattering on resonant interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

研究成果: Article同行評審

摘要

Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling have been investigated. It is found that the interband tunneling becomes the sequential tunneling dominant due to inelastic scattering, resulting in the reduced transmission peak and the broadened full-width at half maximum. With inelastic scattering, the calculated peak current density is in better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio, we then try to deduce the origin of the valley currents. The thermionic current components including those from GaSb collector and GaSb well are considered to estimate the peak-to-valley current ratio. It is found that the thermionic component from the GaSb well is an important contributor to the valley current. The calculated peak-to-valley current ratio exhibits a similar variation to the experiments.

原文English
頁(從 - 到)383-393
頁數11
期刊Microelectronic Engineering
43-44
DOIs
出版狀態Published - 1998 八月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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