Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes

Chun Ta Yu, Wei Chih Lai, Cheng Hsiung Yen, Shoou Jinn Chang

研究成果: Article

12 引文 (Scopus)

摘要

The operating voltage, light output power, and efficiency droops of GaN-based light emitting diodes (LEDs) were improved by introducing Mg-doped AlGaN/InGaN superlattice (SL) electron blocking layer (EBL). The thicker InGaN layers of AlGaN/InGaN SL EBL could have a larger effective electron potential height and lower effective hole potential height than that of AlGaN EBL. This thicker InGaN layer could prevent electron leakage into the p-region of LEDs and improve hole injection efficiency to achieve a higher light output power and less efficiency droops with the injection current. The low lateral resistivity of Mg-doped AlGaN/InGaN SL would have superior current spreading at high current injection.

原文English
頁(從 - 到)A663-A670
期刊Optics Express
22
發行號SUPPL. 3
DOIs
出版狀態Published - 2014 一月 1

指紋

light emitting diodes
injection
electrons
output
power efficiency
high current
leakage
electrical resistivity
electric potential

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此文

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abstract = "The operating voltage, light output power, and efficiency droops of GaN-based light emitting diodes (LEDs) were improved by introducing Mg-doped AlGaN/InGaN superlattice (SL) electron blocking layer (EBL). The thicker InGaN layers of AlGaN/InGaN SL EBL could have a larger effective electron potential height and lower effective hole potential height than that of AlGaN EBL. This thicker InGaN layer could prevent electron leakage into the p-region of LEDs and improve hole injection efficiency to achieve a higher light output power and less efficiency droops with the injection current. The low lateral resistivity of Mg-doped AlGaN/InGaN SL would have superior current spreading at high current injection.",
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T1 - Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes

AU - Yu, Chun Ta

AU - Lai, Wei Chih

AU - Yen, Cheng Hsiung

AU - Chang, Shoou Jinn

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AB - The operating voltage, light output power, and efficiency droops of GaN-based light emitting diodes (LEDs) were improved by introducing Mg-doped AlGaN/InGaN superlattice (SL) electron blocking layer (EBL). The thicker InGaN layers of AlGaN/InGaN SL EBL could have a larger effective electron potential height and lower effective hole potential height than that of AlGaN EBL. This thicker InGaN layer could prevent electron leakage into the p-region of LEDs and improve hole injection efficiency to achieve a higher light output power and less efficiency droops with the injection current. The low lateral resistivity of Mg-doped AlGaN/InGaN SL would have superior current spreading at high current injection.

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