Effects of initial GaN growth mode on patterned sapphire on the opto-electrical characteristics of GaN-based light-emitting diodes

Hung Ming Chang, Wei Chih Lai, Shoou Jinn Chang

研究成果: Article

6 引文 (Scopus)

摘要

We have studied the initial growth modes of GaN on patterned sapphire substrate (PSS) with different initial TMGa flow rates. The FWHM of the (102) XRD spectrum of GaN on PSS increased from 470 to 580 arcsec when the initial TMGa flow rate was increased from 80 to 200 sccm. A low TMGa flow rate sufficiently suppresses GaN island growth on the top of the pattern and hence improves GaN crystal quality. The electrical and optical characteristics of GaN-based LEDs on PSS with low initial TMGa were also improved. More than 90% of the GaN LED chips with low initial GaN growth rate can hold the 1-kV machine-mode electrostatic discharge level.

原文English
文章編號6470706
頁(從 - 到)292-296
頁數5
期刊IEEE/OSA Journal of Display Technology
9
發行號4
DOIs
出版狀態Published - 2013 三月 11

指紋

Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes
flow velocity
Flow rate
Substrates
Electrostatic discharge
Full width at half maximum
chips
electrostatics
Crystals
crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

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AB - We have studied the initial growth modes of GaN on patterned sapphire substrate (PSS) with different initial TMGa flow rates. The FWHM of the (102) XRD spectrum of GaN on PSS increased from 470 to 580 arcsec when the initial TMGa flow rate was increased from 80 to 200 sccm. A low TMGa flow rate sufficiently suppresses GaN island growth on the top of the pattern and hence improves GaN crystal quality. The electrical and optical characteristics of GaN-based LEDs on PSS with low initial TMGa were also improved. More than 90% of the GaN LED chips with low initial GaN growth rate can hold the 1-kV machine-mode electrostatic discharge level.

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