Effects of interdiffusion on the band alignment of GeSi dots

J. Wan, Y. H. Luo, Z. M. Jiang, G. Jin, J. L. Liu, Kang L. Wang, X. Z. Liao, J. Zou

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements.

原文English
頁(從 - 到)1980-1982
頁數3
期刊Applied Physics Letters
79
發行號13
DOIs
出版狀態Published - 2001 九月 24

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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