Thin Ta2O5 films were prepared by low-pressure chemical vapor deposition (LPCVD) and subsequently annealed in O2 ambient at various temperatures. It was found that the leakage current of the Ta2O5/SiOx capacitor was controlled by the Ta2O5 layer when the annealing temperature was lower than 700°C. On the other hand, the leakage current was controlled by the interracial oxide layer when the annealing temperature was higher than 700°C. It was also found that we could achieve an equivalent thin oxide thickness and a small leakage current at the same time from the Ta2O5/SiOx capacitor with a suitable thermal annealing treatment.
|頁（從 - 到）||690-693|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2002 二月|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)