Effects of interracial oxide layer for the Ta2O5 capacitor after high-temperature annealing

Jiann Shing Lee, Shi Chung Sun, Shoou Jinn Chang, Jone F. Chen, Chun Hsing Liu, Uang Heay Liaw

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Thin Ta2O5 films were prepared by low-pressure chemical vapor deposition (LPCVD) and subsequently annealed in O2 ambient at various temperatures. It was found that the leakage current of the Ta2O5/SiOx capacitor was controlled by the Ta2O5 layer when the annealing temperature was lower than 700°C. On the other hand, the leakage current was controlled by the interracial oxide layer when the annealing temperature was higher than 700°C. It was also found that we could achieve an equivalent thin oxide thickness and a small leakage current at the same time from the Ta2O5/SiOx capacitor with a suitable thermal annealing treatment.

原文English
頁(從 - 到)690-693
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
發行號2 A
DOIs
出版狀態Published - 2002 二月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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