Indium tin oxide (ITO) films were deposited by ion beam sputtering under various bias voltages. The deposition rate and surface roughness increased with increasing beam voltage. The ITO films showed amorphous structure and were obviously non-stoichiometric. The carrier concentration increased with increasing beam voltage. The conductive electrons of ITO films primarily originated from the oxygen vacancies Vo. The resistivity decreased to a minimum of 3.34 × 10-4 Ω cm at 450 V. The optical transmission in the visible region decreased with increasing beam voltage. Indium tin oxide films with high electron concentration had higher optical energy gap and resulted in blue shift.
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