Effects of ion beam voltage on properties of indium tin oxide films prepared by ion beam sputtering

D. F. Lii, J. L. Huang, I. J. Jen, S. S. Lin

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Indium tin oxide (ITO) films were deposited by ion beam sputtering under various bias voltages. The deposition rate and surface roughness increased with increasing beam voltage. The ITO films showed amorphous structure and were obviously non-stoichiometric. The carrier concentration increased with increasing beam voltage. The conductive electrons of ITO films primarily originated from the oxygen vacancies Vo. The resistivity decreased to a minimum of 3.34 × 10-4 Ω cm at 450 V. The optical transmission in the visible region decreased with increasing beam voltage. Indium tin oxide films with high electron concentration had higher optical energy gap and resulted in blue shift.

原文English
頁(從 - 到)295-299
頁數5
期刊Surface Engineering
23
發行號4
DOIs
出版狀態Published - 2007 八月 1

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 材料化學

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