Effects of last barrier thickness on the hot-cold factor of GaN-based light-emitting diodes

Qiuping Luan, Kin Tak Lam, Shoou Jinn Chang

研究成果: Article同行評審

摘要

The study of thermal properties for GaN-based light-emitting diodes (LEDs) with various last barrier thicknesses was reported. It was found that the LED output power decreased as we increased the thickness of the last barrier. It was also found that the LED output powers decrease with the increase of temperature for the LEDs with 12-, 24-, and 48-nm-thick last barriers. However, it was found that the LED output power increases with the increase of temperature for the LED with a 72-nm-thick last barrier due to the fact that more holes could enter the multiquantum well active region at elevated temperatures. Furthermore, it was found that the output power decreased by 0.15%/°C, 0.15%/°C, and 0.11%/°C for the LEDs with 12-, 24-, and 48-nm-thick last barriers, respectively, but increased by 0.09%/°C for the LED with a 72-nm-thick last barrier.

原文English
文章編號057602
期刊Journal of Photonics for Energy
5
發行號1
DOIs
出版狀態Published - 2015 一月 1

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 可再生能源、永續發展與環境

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