Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

Bo Yuan Su, Sheng Yuan Chu, Yung Der Juang, Ssu Yin Liu

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0-10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm2/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm2/V s and 0.74 V/dec, respectively), and an on-off current ratio of over 106. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.

原文English
頁(從 - 到)10-14
頁數5
期刊Journal of Alloys and Compounds
580
DOIs
出版狀態Published - 2013 一月 1

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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