TY - JOUR
T1 - Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors
AU - Su, Bo Yuan
AU - Chu, Sheng Yuan
AU - Juang, Yung Der
AU - Liu, Ssu Yin
N1 - Funding Information:
This work was supported by the National Science Council of Taiwan under Grants NSC 101-2623-E-006-003-ET and NSC 101-3113-E-006-014 and NSC 102-3113-E-006-003 and NSC 101-2622-E-006-014-CC3 .
PY - 2013
Y1 - 2013
N2 - The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0-10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm2/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm2/V s and 0.74 V/dec, respectively), and an on-off current ratio of over 106. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.
AB - The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0-10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm2/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm2/V s and 0.74 V/dec, respectively), and an on-off current ratio of over 106. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.
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U2 - 10.1016/j.jallcom.2013.05.077
DO - 10.1016/j.jallcom.2013.05.077
M3 - Article
AN - SCOPUS:84878493950
SN - 0925-8388
VL - 580
SP - 10
EP - 14
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -