Effects of Nb Doping on Crystalline Orientation, Microstructure and Electrical Properties of Non-Stoichiometric PZT Thick Films via Hybrid Sol-Gel Method

In this research, a hybrid sol-gel method was used to fabricate Pb(Zr0.52Ti0.48)1-xNbxO3 PZT-based piezoelectric thick films. By preparing sol-gel solutions with different Nb concentrations (x = 0%-4%) and mixing them with PZT-5A piezoelectric powders, the microstructure and electrical properties were improved. The X-ray diffraction (XRD) and scanning electron microscope (SEM) results showed that PZT films with 2% Nb doping exhibited high crystallinity and dense surfaces. The maximum dielectric constant, piezoelectric coefficient d33 of 133(pm V-1), and remnant polarization value of 58(μC cm-2) were obtained in a 2% Nb-dopant. These data were much better than the published results. Roughness and dielectric loss were also improved significantly with 2% Nb dopants.