Effects of nitrogen incorporation on the electronic properties of Ga xIn1-xNyAs1-y epilayers probed by persistent photoconductivity

S. H. Hsu; W. R. Chen; Y. K. Su; R. W. Chuang; S. J. Chang; W. C. Chen

doi:10.1016/j.jcrysgro.2005.12.078

Effects of nitrogen incorporation on the electronic properties of Ga _xIn_1-xN_yAs_1-y epilayers probed by persistent photoconductivity

S. H. Hsu
, W. R. Chen
, Y. K. Su
, R. W. Chuang
, S. J. Chang
, W. C. Chen

研究成果: Article › 同行評審

摘要

The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.

原文	English
頁（從 - 到）	87-90
頁數	4
期刊	Journal of Crystal Growth
卷	290
發行號	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.078
出版狀態	Published - 2006 4月 15

All Science Journal Classification (ASJC) codes

凝聚態物理學
無機化學
材料化學

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10.1016/j.jcrysgro.2005.12.078

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title = "Effects of nitrogen incorporation on the electronic properties of Ga xIn1-xNyAs1-y epilayers probed by persistent photoconductivity",

abstract = "The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.",

author = "Hsu, \{S. H.\} and Chen, \{W. R.\} and Su, \{Y. K.\} and Chuang, \{R. W.\} and Chang, \{S. J.\} and Chen, \{W. C.\}",

note = "Funding Information: The authors would like to thank Shipley Company for providing MO sources. This work was supported by the Ministry of Education Program for Promoting Academic Excellence of Universities, Taiwan, R.O.C. under the Grant A-91-E-FA08-1-4.",

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doi = "10.1016/j.jcrysgro.2005.12.078",

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T1 - Effects of nitrogen incorporation on the electronic properties of Ga xIn1-xNyAs1-y epilayers probed by persistent photoconductivity

AU - Hsu, S. H.

AU - Chen, W. R.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Chang, S. J.

AU - Chen, W. C.

N1 - Funding Information: The authors would like to thank Shipley Company for providing MO sources. This work was supported by the Ministry of Education Program for Promoting Academic Excellence of Universities, Taiwan, R.O.C. under the Grant A-91-E-FA08-1-4.

PY - 2006/4/15

Y1 - 2006/4/15

N2 - The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.

AB - The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.

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U2 - 10.1016/j.jcrysgro.2005.12.078

DO - 10.1016/j.jcrysgro.2005.12.078

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SN - 0022-0248

VL - 290

SP - 87

EP - 90

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Effects of nitrogen incorporation on the electronic properties of Ga xIn1-xNyAs1-y epilayers probed by persistent photoconductivity

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Effects of nitrogen incorporation on the electronic properties of Ga _xIn_1-xN_yAs_1-y epilayers probed by persistent photoconductivity